Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/1520
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dc.contributor.authorPadma Kumar, H-
dc.contributor.authorJoseph, J T-
dc.contributor.authorThomas, J K-
dc.contributor.authorManoj Raama Varma-
dc.contributor.authorAnnamma, J-
dc.contributor.authorSam Solomon-
dc.date.accessioned2014-06-12T09:16:45Z-
dc.date.available2014-06-12T09:16:45Z-
dc.date.issued2007-
dc.identifier.citationMaterials Science and Engineering B 143(1-3):51–54;25 Oct 2007en_US
dc.identifier.urihttp://ir.niist.res.in:8080/jspui/handle/123456789/1520-
dc.description.abstractLnTiTaO6 ceramics, doped with ZnO, were prepared in the solid-state ceramic route. The cylindrical samples were sintered at temperatures between 1360 and 1575 ◦C. The densities were measured using Archimedes method. Samples were characterized by X-ray diffraction and scanning electron microscopic methods. Microwave dielectric properties of the cylindrical samples were measured using cavity resonator method. Doping of ZnO reduced the sintering temperature. The dielectric constant (εr) increases for smaller doping concentrations and decreases when the doping is higher. The variation of temperature coefficient of resonant frequency (τf) decreases on smaller doping and increases on higher doping concentrations. The quality factor of all these samples are good enough for practical applications. Considerable grain growth is also observed in doped samples.en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectCeramicsen_US
dc.subjectSinteringen_US
dc.subjectDopingen_US
dc.subjectDielectric resonatorsen_US
dc.subjectMicrowave dielectricsen_US
dc.titleInfluence of zinc oxide addition on LnTiTaO6 (Ln = Pr, Sm and Dy) materials for dielectric resonatorsen_US
dc.typeArticleen_US
Appears in Collections:2007

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