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dc.contributor.authorBiju, A-
dc.contributor.authorShabna, R-
dc.contributor.authorSarun, P M-
dc.contributor.authorVinu, S-
dc.contributor.authorSyamaprasad, U-
dc.date.accessioned2014-06-25T11:11:25Z-
dc.date.available2014-06-25T11:11:25Z-
dc.date.issued2010-
dc.identifier.citationInternational Journal of Applied Ceramic Technology 7(S1):E16-E22;2010en_US
dc.identifier.issn1546-542X-
dc.identifier.urihttp://ir.niist.res.in:8080/jspui/handle/123456789/1549-
dc.description.abstractResistivity measurements in the temperature range (64-300 K) were used to study the metal-insulator transition (MIT) driven by a change in the carrier concentration of the Bi(1.7)Pb(0.4)Sr(2)Ca(1.1)Cu(2.1)O(y) [(Bi,Pb)-2212] system. The carrier-concentration is changed by substituting rare-earth (RE) elements (Nd, Gd, and Yb) at the Sr site of (Bi,Pb)-2212. Results show that at higher levels of RE substitution, MIT occurs in (Bi,Pb)-2212, during which the resistivity becomes minimum at a particular temperature(T(min)) for a particular doping level. Below this temperature, resistivity increases with a decrease in the temperature and vice versa, showing an insulating and a metallic nature, respectively. This T(min) and the carrier concentration at which MIT occurs depend on the substituted RE.en_US
dc.language.isoenen_US
dc.publisherWileyen_US
dc.subjectTransport-Propertiesen_US
dc.subjectSuperconducting Propertiesen_US
dc.subjectCrossoveren_US
dc.subjectCrystalsen_US
dc.titleEffect of Yb, Gd, and Nd substitution at the Sr site on the metal-insulator transition of the (Bi,Pb)-2212 systemen_US
dc.typeArticleen_US
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