Please use this identifier to cite or link to this item: http://localhost:8080/xmlui/handle/123456789/1818
Title: Hafnium silicate: A new microwave dielectric ceramic with low thermal expansivity
Authors: Jobin Varghese
Tony Joseph
Surendran, K P
Rajan, T P D
Sebastian, M T
Keywords: Hafnium silicate
Zirconium orthosilicate
HfSiO4 ceramics
Issue Date: 2015
Publisher: Royal Society of Chemistry
Citation: Dalton Transactions 44(11):5146-5152;21 Mar 2015
Abstract: A HfSiO4 ceramic was prepared by a conventional solid state synthesis method by sintering at 1600 degrees C. The morphology of the sintered surface was characterized using scanning electron microscopy and atomic force microscopy and the average surface roughness was about 118 nm. The sintered HfSiO4 ceramic has epsilon(r) = 7.0, Q(u) x f = 25 000 and tau(f) = -44 ppm degrees C-1 at 10 GHz. It exhibits promising thermal properties such as a low linear thermal expansivity (CTE) of -1.8 ppm degrees C-1 (dilatometer) in the temperature range of 30-800 degrees C and a room temperature thermal conductivity of 11 W m(-1) K-1.
ISSN: 1477-9226
Appears in Collections:2015

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