Tuning the properties of microwave dielectric resonators in a stack configuration

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DC Field	Value	Language
dc.contributor.author	Kataria, N D	-
dc.contributor.author	Jawahar, I N	-
dc.contributor.author	Sebastian, M T	-
dc.date.accessioned	2015-08-09T12:01:49Z	-
dc.date.available	2015-08-09T12:01:49Z	-
dc.date.issued	2006	-
dc.identifier.citation	Materials Letters 60(21-22):2642-2644;Sep 2006	en_US
dc.identifier.issn	0167-577X	-
dc.identifier.uri	http://ir.niist.res.in:8080/jspui/handle/123456789/1952	-
dc.description.abstract	The microwave properties of ceramic dielectric resonators in a stack configuration are investigated using two different dielectric materials with opposite temperature coefficients of resonant frequency in the temperature range 50-300 K. The two dielectrics, which have been studied, are Ba(5)Nb(4)O(15) and 5ZnO-Nb(2)O(5), synthesized by the conventional solid-state ceramic route. The temperature coefficient of resonant frequency of the stack resonator is tuned by varying the volume fraction of 5ZnO-Nb(2)O(5). Temperature coefficient of resonant frequency slowly changed from a non-linear to almost a linear behavior with increase in the volume fraction of 5ZnO-Nb(2)O(5).	en_US
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.subject	Dielectric materials	en_US
dc.subject	Oscillator	en_US
dc.title	Tuning the properties of microwave dielectric resonators in a stack configuration	en_US
dc.type	Article	en_US
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