Please use this identifier to cite or link to this item: http://localhost:8080/xmlui/handle/123456789/2129
Full metadata record
DC FieldValueLanguage
dc.contributor.authorChacko, S-
dc.contributor.authorPhilip, N S-
dc.contributor.authorGopchandran, K G-
dc.contributor.authorPeter Koshy-
dc.contributor.authorVaidyan, V K-
dc.date.accessioned2016-01-18T07:11:07Z-
dc.date.available2016-01-18T07:11:07Z-
dc.date.issued2008-
dc.identifier.citationApplied Surface Science 254(7):2179-2186;30 Jan 2008en_US
dc.identifier.issn0169-4332-
dc.identifier.urihttp://ir.niist.res.in:8080/jspui/handle/123456789/2129-
dc.description.abstractPhysical properties of a nanocrystalline thin film is greatly influenced by its morphological and structural evolution. We try to understand the transition of SnO2 thin films from amorphous to nanocrystalline structure with XRD, IR, SEM, AFM and surface profiler studies. A 2D layer like structure resulting from quantum confinement is found for the films prepared at 400 degrees C. We observed a new IR band at 530 cm(-1) that was theoretically predicted and report it for the first time. A correlation of population of defects in SnO2 films with change in lattice parameters and FWHM of IR bands are reported. The electric and optical properties of the films have been discussed.en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectOxygen vacanciesen_US
dc.subjectStructural and optical propertiesen_US
dc.subjectIR band at 530 cm(-1) in SnO2 thin filmsen_US
dc.subjectTin oxide-filmsen_US
dc.subjectLattice-dynamicsen_US
dc.subjectRaman-spectrumen_US
dc.subjectElectrical-propertiesen_US
dc.subjectVapor-depositionen_US
dc.subjectRutile structureen_US
dc.subjectPhotoluminescenceen_US
dc.subjectPyrolysisen_US
dc.titleNanostructural and surface morphological evolution of chemically sprayed SnO2 thin filmsen_US
dc.typeArticleen_US
Appears in Collections:2008

Files in This Item:
File Description SizeFormat 
2008_0161.pdf
  Restricted Access
1.45 MBAdobe PDFView/Open Request a copy


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.