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dc.contributor.authorThejas, K K-
dc.contributor.authorMalini, A-
dc.contributor.authorArup, K K-
dc.contributor.authorNuno, A M-
dc.contributor.authorMaria, T-
dc.contributor.authorSubrata, D-
dc.date.accessioned2023-05-02T10:16:27Z-
dc.date.available2023-05-02T10:16:27Z-
dc.date.issued2023-02-08-
dc.identifier.citationACS Applied Materials & Interfaces;15(5):7083-7101en_US
dc.identifier.urihttps://doi.org/10.1021/acsami.2c20066-
dc.identifier.urihttp://localhost:8080/xmlui/handle/123456789/4468-
dc.description.abstractRed emission from Mn4+-containing oxides inspired the development of high color rendering and cost-effective whitelight-emitting diodes (WLEDs). Aiming at this fact, a series of new crystallographic site modified (Mg, Ba)3M2GeO8: Mn4+ (M = Al, Ga) compositions were developed with strong deep-red emission in the reaction to UV and blue lights. The Mg3Al2GeO8 host is composed of three phases: orthorhombic-Mg3Ga2GeO8, orthorhombic-Mg2GeO4, and cubic-MgAl2O4. However, Mg3Ga2GeO8 secured an orthorhombic crystal structure. Interestingly, Mg3Al2GeO8: Mn4+ showed a 13- fold more intense emission than Mg3Ga2GeO8: Mn4+ since Mn4+ occupancy was preferable to [AlO6] sites compared to [GaO6]. The coexisting phases of MgAl2O4 and Mg2GeO4 in Mg3Al2GeO8: Mn4+ contributed to Mn4+ luminescence by providing additional [AlO6] and [MgO6] octahedrons for Mn4+ occupancy. Further, these sites reduced the natural reduction probability of Mn4+ to Mn2+ in [AlO4] tetrahedrons, which was confirmed using cathodoluminescence analysis for the first time. A cationic substitution strategy was employed on Mg3M2GeO8: Mn4+ to improve the luminescence, and Mg3−xBaxM2GeO8: Mn4+ (M = Al, Ga) phosphors were synthesized. Partial substitution of larger Ba2+ ions in Mg2+ sites caused structural distortions and generated a new Ba impurity phase, which improved the photoluminescence. Compositionally tuned Mg2.73Ba0.27Al1.993GeO8: 0.005Mn4+ exhibited a 35-fold higher emission than that of Mg3Ga1.993GeO8: 0.005Mn4+. Additionally, this could retain 70% of its ambient emission intensity at 453 K. A warm WLED with a correlated color temperature (CCT) of 3730 K and a CRI of 89 was fabricated by combining the optimized red component with Y3Al5O12: Ce3+ and 410 nm blue LED. By tuning the ratio of blue (BaMgAl10O17: Eu2+), green (Ce0.63Tb0.37MgAl11O19), and red (Mg2.73Ba0.27Al2GeO8: 0.005Mn4+) phosphors, another WLED was developed using a 280 nm UV-LED chip. This showed natural white emission with a CRI of 79 and a CCT of 5306 K. Meanwhile, three red LEDs were also fabricated using the Mg2.73Ba0.27Al1.993GeO8: 0.005Mn4+ phosphor with commercial sources. These could be potential pc-LEDs for plant growth applications.en_US
dc.language.isoenen_US
dc.publisherACS Publicationsen_US
dc.subjectMn4+ emission enrichmenten_US
dc.subjectcationic substitutionsen_US
dc.subjectdistorted latticeen_US
dc.subjectphoto- and cathode-luminescenceen_US
dc.subjectlight-emitting diodesen_US
dc.titleEnriching the Deep-Red Emission in (Mg, Ba)3M2GeO8: Mn4+ (M = Al, Ga) Compositions for Light-Emitting Diodesen_US
dc.typeArticleen_US
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