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dc.contributor.authorSiddheswaran, R-
dc.contributor.authorMangalaraja, R V-
dc.contributor.authorAvila, R E-
dc.contributor.authorGomez, M E-
dc.contributor.authorManikandan, D-
dc.contributor.authorLopez, M-
dc.contributor.authorEsther Jeyanthi, C-
dc.contributor.authorAnanthakumar, S-
dc.date.accessioned2013-07-08T06:37:31Z-
dc.date.available2013-07-08T06:37:31Z-
dc.date.issued2012-
dc.identifier.citationJournal of Ceramic Processing Research 13(6):801-805;2012en_US
dc.identifier.urihttp://hdl.handle.net/123456789/544-
dc.description.abstractTransparent polycrystalline ZnO and Co,Al co-doped ZnO [Zn1-x-yCoxAlyO; x = 0.03; y = 0.02] thin films were fabricated using sol-gel spin coating on glass substrates and subsequently annealed at 500 οC for 2 h in an ambient atmosphere. The decomposition of the precursors and formation of the metal oxide during annealing was explained by thermal analysis. X-ray crystal diffraction analysis on the co-doped ZnO thin films confirmed the formation of the hexagonal wurtzite structure.Microstructural studies revealed that the films were filled with particulates of sizes ranging between 40-50 nm and with a uniform film thickness of about 700 nm after annealing at 500 οC. Atomic force microscopy (AFM) images demonstrated a fine and smooth surface of the thin films. The spin coated films have also been shown to possess polycrystalline grains with a compact and void-free morphology. The energy dispersive X-ray spectroscopic (EDS) analysis confirmed the presence of Co,Al, Zn and O. The room temperature (300 K) ferromagnetic behavior of Co, Al co-doped ZnO thin films is also discusseden_US
dc.language.isoenen_US
dc.publisherHanyang University Pressen_US
dc.subjectFerromagnetismen_US
dc.subjectMicrostructureen_US
dc.subjectMorphologyen_US
dc.subjectSpin coatingen_US
dc.subjectAl:ZnO thin filmen_US
dc.titleFabrication and characterization of Co, Al:ZnO thin films by a sol-gel spin coating technique for ferromagnetic applicationsen_US
dc.typeArticleen_US
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