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dc.contributor.authorShabna, R-
dc.contributor.authorSarun, P M-
dc.contributor.authorVinu, S-
dc.contributor.authorSyamaprasad, U-
dc.date.accessioned2013-11-01T09:57:18Z-
dc.date.available2013-11-01T09:57:18Z-
dc.date.issued2010-
dc.identifier.citationJournal of Alloys and Compounds 493(1-2):11-16;18 Mar 2010en_US
dc.identifier.issn0925-8388-
dc.identifier.urihttp://ir.niist.res.in:8080/jspui/handle/123456789/679-
dc.description.abstractWe report on the details of carrier localization and metal to insulator transition in (Bi,Pb)-2212 by substituting Ce at its Sr site (0.2 <= x <= 1.0). Structural and compositional analysis confirm good homogeneity of Ce distribution in the (Bi,Pb)-2212 matrix. The resistivity measurements show that x = 0.2 sample is a superconductor while those with x > 0.2 are insulators. Resistivity in the insulating regime (0.4 <= x <= 1.0) is analyzed using a generalized hopping approach. The increase in normal state resistivity and disorder of the samples leads to a metal to insulator transition at 0.2 < x <= 0.4 and the insulating phases exhibit Mott's variable range hopping phenomenon. Around the transition, a dimensional change over from two to three dimensions is observed in the variable range hopping regime. Results show that substitution reduces the carrier concentration of (Bi,Pb)-2212, leads to suppression of superconductivity and metal to insulator transition in the system by localizing the electronic states at the Fermi level.en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectBi-2212 superconductoren_US
dc.subjectMetal insulator transitionen_US
dc.subjectVariable range hoppingen_US
dc.subjectAnderson localizationen_US
dc.titleCharge carrier localization and metal to insulator transition in cerium substituted (Bi,Pb)-2212 superconductoren_US
dc.typeArticleen_US
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