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dc.contributor.authorButee, S-
dc.contributor.authorKulkarni, A-
dc.contributor.authorOm Prakash-
dc.contributor.authorAiyar, R P R C-
dc.contributor.authorSumesh George-
dc.contributor.authorSebastian, M T-
dc.identifier.citationJournal of the American Ceramic Society 92(5):1047-1053;May 2009en_US
dc.description.abstract(Ni1-xZnx)Nb2O6, 0 <= x <= 1.0, ceramics with >97% density were prepared by a conventional solid-state reaction, followed by sintering at 1200 degrees-1300 degrees C ( depending on the value of x). The XRD patterns of the sintered samples (0 <= x <= 1.0) revealed single-phase formation with a columbite (Pbcn) structure. The unit cell volume slightly increased with increasing Zn content (x). All the compositions showed high electrical resistivity (rho(dc) = 1.6 +/- 0.3 x 10(11) The microwave (4-5 GHz) dielectric properties of (Ni1-xZnx)Nb2O6 ceramics exhibited a significant dependence on the Zn content and to some extent on the morphology of the grains. As x was increased from 0 to 1, the average grain size monotonically increased from 7.6 to 21.2 mu m and the microwave dielectric constant (epsilon(r)') increased from 23.6 to 26.1, while the quality factors (Q(u) X f) increased from 18 900 to 103 730 GHz and the temperature coefficient of resonant frequency (tau(f)) increased from -62 to -73 ppm/degrees C. In the present work, we report the highest observed values of Q(u) X f = 103 730 GHz, and epsilon(r)' = 26.1 for the ZnNb2O6-sintered ceramicsen_US
dc.subject(ZN1-XMGX)NB2O6 Ceramicsen_US
dc.subjectZNNB2O6 Ceramicsen_US
dc.subjectGrain sizeen_US
dc.titleHigh Q microwave dielectric ceramics in (Ni1-x Zn-x)Nb2O6 systemen_US
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