Please use this identifier to cite or link to this item: http://localhost:8080/xmlui/handle/123456789/852
Title: ZrSiO4 ceramics for microwave integrated circuit applications
Authors: Varghese, J
Joseph, T
Sebastian, M T
Keywords: Ceramics
Dielectrics
Electronic materials
Microstructure
FTIR
X ray techniques
Negative thermal-expansion
Forsterite ceramics
Glass
Issue Date: 2011
Publisher: Elsevier
Citation: Materials Letters 65(7):1092-1094;15 Apr 2011
Abstract: The sintering temperature of ZrSiO4 ceramic was optimized by studying the variation of density as a function of temperature. The dielectric properties were investigated at the radio and microwave frequencies. It has epsilon(r) = 10.5, tan delta = 0.0016 (at 1 MHz), epsilon(r) = 7.4, tan delta = 0.0006 (at 5.15 C,Hz) and tau(epsilon) = 225 ppm/degrees C (at I MHz). The ceramic exhibited a negative coefficient of thermal expansion (CTE) of -2.4 ppm/degrees C in the temperature range of 30-800 degrees C.
URI: http://ir.niist.res.in:8080/jspui/handle/123456789/852
ISSN: 0167-577X
Appears in Collections:2011

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