ZrSiO4 ceramics for microwave integrated circuit applications

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Title:	ZrSiO4 ceramics for microwave integrated circuit applications
Authors:	Varghese, J Joseph, T Sebastian, M T
Keywords:	Ceramics Dielectrics Electronic materials Microstructure FTIR X ray techniques Negative thermal-expansion Forsterite ceramics Glass
Issue Date:	2011
Publisher:	Elsevier
Citation:	Materials Letters 65(7):1092-1094;15 Apr 2011
Abstract:	The sintering temperature of ZrSiO4 ceramic was optimized by studying the variation of density as a function of temperature. The dielectric properties were investigated at the radio and microwave frequencies. It has epsilon(r) = 10.5, tan delta = 0.0016 (at 1 MHz), epsilon(r) = 7.4, tan delta = 0.0006 (at 5.15 C,Hz) and tau(epsilon) = 225 ppm/degrees C (at I MHz). The ceramic exhibited a negative coefficient of thermal expansion (CTE) of -2.4 ppm/degrees C in the temperature range of 30-800 degrees C.
URI:	http://ir.niist.res.in:8080/jspui/handle/123456789/852
ISSN:	0167-577X
Appears in Collections:	2011

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