ZrSiO4 ceramics for microwave integrated circuit applications

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DC Field	Value	Language
dc.contributor.author	Varghese, J	-
dc.contributor.author	Joseph, T	-
dc.contributor.author	Sebastian, M T	-
dc.date.accessioned	2013-11-28T05:02:39Z	-
dc.date.available	2013-11-28T05:02:39Z	-
dc.date.issued	2011	-
dc.identifier.citation	Materials Letters 65(7):1092-1094;15 Apr 2011	en_US
dc.identifier.issn	0167-577X	-
dc.identifier.uri	http://ir.niist.res.in:8080/jspui/handle/123456789/852	-
dc.description.abstract	The sintering temperature of ZrSiO4 ceramic was optimized by studying the variation of density as a function of temperature. The dielectric properties were investigated at the radio and microwave frequencies. It has epsilon(r) = 10.5, tan delta = 0.0016 (at 1 MHz), epsilon(r) = 7.4, tan delta = 0.0006 (at 5.15 C,Hz) and tau(epsilon) = 225 ppm/degrees C (at I MHz). The ceramic exhibited a negative coefficient of thermal expansion (CTE) of -2.4 ppm/degrees C in the temperature range of 30-800 degrees C.	en_US
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.subject	Ceramics	en_US
dc.subject	Dielectrics	en_US
dc.subject	Electronic materials	en_US
dc.subject	Microstructure	en_US
dc.subject	FTIR	en_US
dc.subject	X ray techniques	en_US
dc.subject	Negative thermal-expansion	en_US
dc.subject	Forsterite ceramics	en_US
dc.subject	Glass	en_US
dc.title	ZrSiO4 ceramics for microwave integrated circuit applications	en_US
dc.type	Article	en_US
Appears in Collections:	2011

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