Girija, R V; Deepa, J P; Lakshmi, V; Rajan, T P D; Pavithran, C; Pai, B C
(ACT, 2015-09)
Porous SiC was successfully fabricated by a facile and energy efficient sacrificial porogen leaching method using in situ synthesized
aluminum-based binders by reaction bonding at low sintering temperatures of 600–1000°C. ...