Hafnium silicate: A new microwave dielectric ceramic with low thermal expansivity

dc.contributor.author	Jobin Varghese
dc.contributor.author	Tony Joseph
dc.contributor.author	Surendran, K P
dc.contributor.author	Rajan, T P D
dc.contributor.author	Sebastian, M T
dc.date.accessioned	2015-05-22T07:36:15Z
dc.date.available	2015-05-22T07:36:15Z
dc.date.issued	2015
dc.identifier.citation	Dalton Transactions 44(11):5146-5152;21 Mar 2015	en_US
dc.identifier.issn	1477-9226
dc.identifier.uri	http://ir.niist.res.in:8080/jspui/handle/123456789/1818
dc.description.abstract	A HfSiO4 ceramic was prepared by a conventional solid state synthesis method by sintering at 1600 degrees C. The morphology of the sintered surface was characterized using scanning electron microscopy and atomic force microscopy and the average surface roughness was about 118 nm. The sintered HfSiO4 ceramic has epsilon(r) = 7.0, Q(u) x f = 25 000 and tau(f) = -44 ppm degrees C-1 at 10 GHz. It exhibits promising thermal properties such as a low linear thermal expansivity (CTE) of -1.8 ppm degrees C-1 (dilatometer) in the temperature range of 30-800 degrees C and a room temperature thermal conductivity of 11 W m(-1) K-1.	en_US
dc.language.iso	en	en_US
dc.publisher	Royal Society of Chemistry	en_US
dc.subject	Hafnium silicate	en_US
dc.subject	Conductivity	en_US
dc.subject	Zirconium orthosilicate	en_US
dc.subject	HfSiO4 ceramics	en_US
dc.title	Hafnium silicate: A new microwave dielectric ceramic with low thermal expansivity	en_US
dc.type	Article	en_US