Abstract:
BaWO4 doped with ZnO (2, 3, 5, 7 and 10 wt%) nanostructured films are
prepared on quartz substrates by pulsed laser ablation. The films are post annealed at
900
◦
C. GIXRD analysis of the post-annealed films reveal the change of orientation of
scheelite tetragonal crystal growth from 1 1 2 reflection plane to 0 0 4 planes when doping
concentration is more than 3 wt%. The AFM images show that film with 7 wt% ZnO
doping concentration has good ceramic pattern with surface features giving a minimum
value of rms surface roughness suitable for optoelectronic device applications. The optical
transmittance and band-gap energy of the films are found to decrease considerably on postannealing
which can be due to the increase in grain size of the crystallites on annealing.
Thus doping with ZnO improves the surface features of the films and increases the optical
band-gap energy.
