Abstract:
Ba(Zn1/3Ta2/3)O3 has been prepared with
different dopants that gave best microwave dielectric
properties at room temperature. Effects of different
dopants on the low temperature microwave dielectric
properties of BZT were investigated. With decrease in
temperature, loss tangent was found to decrease
marginally and then increase at temperatures lower
than 100 K. Increase in loss factor at lower temperatures
were found to be less for dopants with smaller
ionic radii. Dielectric constant was found to be almost
independent of temperature. Temperature coefficient
of resonant frequency slowly decreased from a positive
value to negative value when temperature was lowered.
Temperature at which sf becomes zero was found
to vary for different dopants. There is a temperature
stable region for tand, er and sf which varies for
different dopants.
