Abstract:
This paper describes the development of polyvinylcarbazole–
ZnO hybrid nanocomposites (PVZ) comprising electron donor
carbazole moiety (p-type) and electron acceptor zinc oxide (ntype)
by a facile strategy and demonstrated its application as an
active layer in the nonvolatile memory device. The structure
and composition of the nanocomposite were studied by UVVisible
absorption, photoluminescence, Raman, FT-IR, XRD,
SEM, HR-TEM, and AFM. The results suggested that ZnO
retains its hierarchical supramolecular porous morphology
and wurtzite crystalline phase with defect states in the PVZ
hybrid nanocomposite. PVZ exhibited good solubility in
dichlorobenzene and memory devices were fabricated by
sandwiching PVZ nanocomposites between indium tin oxide
and silver electrode (ITO/PVZ/Ag). The conduction mechanism
in the devices was manifested by fitting the double
logarithmic I–V plots. Slope value of I–V plots suggested
conduction mechanism in the devices was followed Ohmic,
Poole–Frenkel emission, and trap filled space charge limited
conduction which depends on the applied voltage. Endurance
performances of the devices were stable for more than 100
cycles having ON/OFF current ratio of 5.2 103 and retention
time of 105 s.
