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Charge Carrier Polarity Modulation in Diketopyrrolopyrrole-Based Low Band Gap Semiconductors by Terminal Functionalization

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dc.contributor.author S, Ghosh
dc.contributor.author R, Raveendran
dc.contributor.author A, Saeki
dc.contributor.author S, Seki
dc.contributor.author M, Namboothiry
dc.contributor.author A, Ajayaghosh
dc.date.accessioned 2020-02-26T09:00:51Z
dc.date.available 2020-02-26T09:00:51Z
dc.date.issued 2018-12-13
dc.identifier.citation ACS Applied Materials & Interfaces; 11(1):1088-1095 en_US
dc.identifier.uri https://pubs.acs.org/doi/pdf/10.1021/acsami.8b16714
dc.identifier.uri http://10.10.100.66:8080/xmlui/handle/123456789/3591
dc.description.abstract Organic semiconductors with variable charge carrier polarity are required for optoelectronic applications. Herein, we report the synthesis of three novel diketopyrrolopyrrole (DPP)-based D–A molecules having three different terminal groups (amide, ester, and dicyano) and study their electronic properties. An increase in electron acceptor strength from amide to dicyano leads to a bathochromic shift in absorption. Photoconductivity and field effect transistor (FET) measurements confirmed that a small increase in acceptor strength can result in a large change in the charge transport properties from p-type to n-type. The molecule with an amide group, DPP–amide, exhibited a moderate p-type mobility (1.3 × 10–2 cm2 V–1 s–1), whereas good n-type mobilities were observed for molecules with an ester moiety, DPP–ester (1.5 × 10–2 cm2 V–1 s–1), and with a dicyano group, DPP–DCV (1 × 10–2 cm2 V–1 s–1). The terminal functional group modification approach presented here is a simple and efficient method to alter the charge carrier polarity of organic semiconductors. en_US
dc.language.iso en en_US
dc.publisher American Chemical Society en_US
dc.subject diketopyrrolopyrrole en_US
dc.subject self-assembly en_US
dc.subject low band gap en_US
dc.subject p−n switch en_US
dc.subject FP-TRMC en_US
dc.title Charge Carrier Polarity Modulation in Diketopyrrolopyrrole-Based Low Band Gap Semiconductors by Terminal Functionalization en_US
dc.type Article en_US


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  • 2019
    Research articles authored by NIIST researchers published in 2019

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