Abstract:
Al-doped ZnO rods of nanometer to sub-micrometer size range have been successfully synthesized by a simple yet
cost-effective solution processed sonochemical technique. Systematic XRD analysis established the solid solubility limit for Al in the ZnO lattice to be ca. 3 mol% at an elevated annealing temperature of 800 ◦C. The
secondary ZnAl2O4 phase appears with increasing dopant concentrations and at lower annealing temperatures.
Significant variations in the optoelectronic properties are induced by modifications in the surface defects of ZnO
rods as a result of Al doping. As a consequence, an improved fill factor (FF) of 74.78 and 75.76% with a conversion efficiency (η) of 1.59 and 1.79% have been achieved for the fabricated DSSC devices made of the 800 ◦C
annealed ZnO rods doped by 1 and 3 mol% Al, respectively.
