dc.contributor.author |
Varghese, J |
|
dc.contributor.author |
Joseph, T |
|
dc.contributor.author |
Sebastian, M T |
|
dc.date.accessioned |
2013-11-28T05:02:39Z |
|
dc.date.available |
2013-11-28T05:02:39Z |
|
dc.date.issued |
2011 |
|
dc.identifier.citation |
Materials Letters 65(7):1092-1094;15 Apr 2011 |
en_US |
dc.identifier.issn |
0167-577X |
|
dc.identifier.uri |
http://ir.niist.res.in:8080/jspui/handle/123456789/852 |
|
dc.description.abstract |
The sintering temperature of ZrSiO4 ceramic was optimized by studying the variation of density as a function of temperature. The dielectric properties were investigated at the radio and microwave frequencies. It has epsilon(r) = 10.5, tan delta = 0.0016 (at 1 MHz), epsilon(r) = 7.4, tan delta = 0.0006 (at 5.15 C,Hz) and tau(epsilon) = 225 ppm/degrees C (at I MHz). The ceramic exhibited a negative coefficient of thermal expansion (CTE) of -2.4 ppm/degrees C in the temperature range of 30-800 degrees C. |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
Elsevier |
en_US |
dc.subject |
Ceramics |
en_US |
dc.subject |
Dielectrics |
en_US |
dc.subject |
Electronic materials |
en_US |
dc.subject |
Microstructure |
en_US |
dc.subject |
FTIR |
en_US |
dc.subject |
X ray techniques |
en_US |
dc.subject |
Negative thermal-expansion |
en_US |
dc.subject |
Forsterite ceramics |
en_US |
dc.subject |
Glass |
en_US |
dc.title |
ZrSiO4 ceramics for microwave integrated circuit applications |
en_US |
dc.type |
Article |
en_US |